2N6277 डाटा शीट PDF( Datasheet )

High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com TECHNICAL DATA SHEET NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEV

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N6277 DESCRIPTION ·High Switching Speed ·High DC Current Gain- : hFE= 30-120@ IC= 20A ·Low Collector Saturation Voltage- :

SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE(sat). • Fast Switching. • Hermetic TO3 Metal package. • Ideal

MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustain