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2N6277 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Power Transistor - Inchange Semiconductor

भाग संख्या 2N6277
समारोह Silicon NPN Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
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2N6277 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6277
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 50A; IB= 10A
VBE(on) Base-Emitter On Voltage
IC= 20A; VCE= 4V
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 75V; IB= 0
VCE= 180V; VBE(off)=1.5V
VCE= 180V; VBE(off)=1.5V; TC=150
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 20A; VCE= 4V
hFE-3
DC Current Gain
IC= 50A; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
Switching times
tr Rise Time
ts Storage Time
tf Fall Time
VCC= 80V, IC= 20A, IB1= 2A, VBE(off)= 5V
VCC= 80V, IC= 20A, IB1= -IB2= 2A
MIN MAX UNIT
150 V
1.0 V
3.0 V
1.8 V
3.5 V
1.8 V
50 μA
10 μA
1.0 mA
0.1 mA
50
30 120
10
30 MHz
600 pF
0.35 μs
0.80 μs
0.25 μs
isc websitewww.iscsemi.cn
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