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2N6277 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN POWER SILICON TRANSISTOR - Microsemi

भाग संख्या 2N6277
समारोह NPN POWER SILICON TRANSISTOR
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
1 Page
		
<?=2N6277?> डेटा पत्रक पीडीएफ

2N6277 pdf
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 1.0Adc, VCE = 4.0Vdc
IC = 20Adc, VCE = 4.0Vdc
IC = 50Adc, VCE = 4.0Vdc
Symbol
hFE
Collector-Emitter Saturation Voltage
IC = 20Adc, IB = 2.0Adc
IC = 50Adc, IB = 10Adc
Base-Emitter Saturation Voltage
IC = 20Adc, IB = 2.0Adc
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit, Forward
Current Transfer Ratio
IC = 1.0Adc, VCE = 10Vdc, f = 10MHz
Output Capacitance
VCB = 10Vdc, IE = 0, f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VCC = 80Vdc; IC = 20Adc; IB = 2.0Adc
Turn-Off Time
VCC = 80Vdc ; IC = 20Adc; IB1 = -IB2 = 2.0Adc
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 5.0Vdc, IC = 50Adc
Test 2
VCE = 8.6Vdc, IC = 165mAdc
Test 3
VCE = 80Vdc, IC = 29mAdc
Test 4
VCE = 120Vdc, IC = 110mAdc
All Types
All Types
2N6274
2N6277
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%
Symbol
|hfe|
Cobo
Symbol
ton
toff
Min.
50
30
10
Min.
3.0
Min.
Max.
Unit
120
1.0
3.0
Vdc
1.8 Vdc
Max.
12
600
Unit
pF
Max.
0.5
1.05
Unit
μs
μs
T4-LDS-0163 Rev. 1 (100546)
Page 2 of 3

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