डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
Si2306 | N-Channel Enhancement Mode Field Effect Transistor Si2306
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) ( |
SiPU |
|
Si2306 | N-Channel Enhancement Mode Field Effect Transistor MCC TM
Micro Commercial Components
Features
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
SI2306
• Halogen free available upon request |
MCC |
|
Si2306 | N-CHANNEL MOSFET SI2306
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
沟道场效应管,功率 MOS 晶体管� |
BLUE ROCKET ELECTRONICS |
|
Si2306 | 20V N-Channel Enhancement Mode MOSFET SI2306
20V N-Channel Enhancement Mode MOSFET
Features
VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V
Features Advanced trench process technology High Density Cell Design Fo |
JinYu |
|
Si2306BDS | N-Channel 30-V (D-S) MOSFET 平网-功率器件专业供应商
0755-83307717
www.ping-web.com
[email protected]
谭小姐
Si2306BDS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.047 at VGS |
Vishay |
|
Si2306DS | N-Channel MOSFET Si2306DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
3.5 2.8
rDS(on) (W)
0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 100% Rg Tested
-
TO |
Vishay Siliconix |
www.DataSheet.in | 2017 | संपर्क |