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SI2306 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - MCC

भाग संख्या SI2306
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स MCC 
लोगो MCC लोगो 
पूर्व दर्शन
1 Page
		
<?=SI2306?> डेटा पत्रक पीडीएफ

SI2306 pdf
SI2306
MCC
TM
Micro Commercial Components
Electrical characteristics (at TA=25unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistancea
Forward Transconductancea
V(BR)DS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0V, ID =250µA
VDS =VGS, ID =250µA
VDS =0V, VGS =±20V
VDS =30V, VGS =0V
VGS =10V, ID =3.5A
VGS =4.5V, ID =2.8A
VDS =4.5V, ID =2.5A
Diode Forward Voltage
VSD IS=1.25A,VGS=0V
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgt
Qgs
Qgd
Rg
Ciss
Coss
Crss
VDS =15V,VGS =5V,ID =2.5A
VDS =15V,VGS =10V,ID =2.5A
f =1.0MHz
VDS =15V,VGS =0V,f =1MHz
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD=15V,
RL=15, ID 1A,
VGEN=10V,Rg=6
Notes :
a.Pulse Test : Pulse Width300µs, duty cycle 2%.
Min Typ Max Unit
30
V
1.0 3.0
±100 nA
0.5 µA
0.038 0.047
0.052 0.065
7.0 S
0.8 1.2
V
3.0 4.5
69
1.6
nC
0.6
2.5 5 7.5
305
65 pF
29
7 11
12 18
ns
14 25
6 10
Revision: A
www.mccsemi .com
2 of 3
2014/06/27

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डाउनलोड[ SI2306 Datasheet.PDF ]


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