SI2306 डाटा शीट PDF( Datasheet )

Si2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (

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SI2306 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features 沟道场效应管,功率 MOS 晶体管�

SI2306 20V N-Channel Enhancement Mode MOSFET Features VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell Design Fo

平网-功率器件专业供应商 0755-83307717 www.ping-web.com [email protected] 谭小姐 Si2306BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.047 at VGS

Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 3.5 2.8 rDS(on) (W) 0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested - TO