R8005ANJ डाटा शीट PDF( Datasheet )

R8005ANJ 　　Nch 800V 5A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 2.1Ω ±5A 120W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lO

isc N-Channel MOSFET Transistor R8005ANJ FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.1Ω(Max) ·100% avalanche teste

R8005ANJ FRG 　　Nch 800V 5A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 800V 2.1Ω ±5A 120W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free platin