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R8005ANJ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ROHM

भाग संख्या R8005ANJ
समारोह Power MOSFET
मैन्युफैक्चरर्स ROHM 
लोगो ROHM लोगो 
पूर्व दर्शन
1 Page
		
<?=R8005ANJ?> डेटा पत्रक पीडीएफ

R8005ANJ pdf
R8005ANJ
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 640V, ID = 5.0A
Tj = 125°C
Values
50
Unit
V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient *6
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 3.13 °C/W
- - 80 °C/W
- - 265 °C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
800 - - V
Drain - Source avalanche
breakdown voltage
V(BR)DSS VGS = 0V, ID = 2.5A
- 900 -
V
Zero gate voltage
drain current
VDS = 800V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
-
-
0.1 100 mA
- 1000
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
- 100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
3
-
5
V
Static drain - source
on - state resistance
VGS = 10V, ID = 2.5A
RDS(on) *7 Tj = 25°C
Tj = 125°C
- 1.60 2.08 W
- 3.80 -
Gate input resistance
RG f = 1MHz, open drain
-
7.6
-
W
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/13
2013.10 - Rev.A

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डाउनलोड[ R8005ANJ Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
R8005ANJPower MOSFETROHM
ROHM


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