R8002ANX डाटा शीट PDF( Datasheet )

R8002ANX Nch 800V 2A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD Features 1) Low on-resistance. 800V 4.3 2A 36W Outline TO-220FM Inner circuit (1) (2) (3) (2) 2) Fast switching speed. 3)

isc N-Channel MOSFET Transistor R8002ANX FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.3Ω(Max) ·100% avalanche teste