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R8002ANX डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Nch 800V 2A Power MOSFET - Rohm

भाग संख्या R8002ANX
समारोह Nch 800V 2A Power MOSFET
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
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<?=R8002ANX?> डेटा पत्रक पीडीएफ

R8002ANX pdf
R8002ANX
Absolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V, ID = 2A
Tj = 125°C
Values Unit
50 V/ns
Thermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 3.41 °C/W
- - 70 °C/W
- - 265 °C
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
800 - - V
Drain - Source avalanche
breakdown voltage
V(BR)DS VGS = 0V, ID = 2A
- 900 -
V
Zero gate voltage
drain current
VDS = 800V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
-
-
0.1 100 A
- 1000
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
- 100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
3
-
5
V
Static drain - source
on - state resistance
VGS = 10V, ID = 1A
RDS(on) *6 Tj = 25°C
Tj = 125°C
-
3.3 4.3
- 6.63 -
Gate input resistance
RG f = 1MHz, open drain
-
5.9
-
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/13
2016.02 - Rev.C

विन्यास 15 पेज
डाउनलोड[ R8002ANX Datasheet.PDF ]


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