MSN7002 डाटा शीट PDF( Datasheet )

MSN7002 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Lead free product is acquired ● Surface mount packag

MSN7002D 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche

MSN7002E 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2300V ● High power and current handing c

MSN7002F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche

MSN7002Z 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche