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MSN7002E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOS FET - MORESEMI

भाग संख्या MSN7002E
समारोह N-Channel Enhancement Mode Power MOS FET
मैन्युफैक्चरर्स MORESEMI 
लोगो MORESEMI लोगो 
पूर्व दर्शन
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<?=MSN7002E?> डेटा पत्रक पीडीएफ

MSN7002E pdf
MSN7002E
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
VSD
IS
Condition
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±10V,VDS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=5V, ID=0.4A
VGS=10V, ID=0.5A
VDS=10V,ID=0.2A
VDS=25V,VGS=0V,
F=1.0MHz
VDD=30V,ID=0.2A
VGS=10V,RGEN=10
VDS=10V,ID=0.3A,
VGS=4.5V
VGS=0V,IS=0.2A
Min Typ Max Unit
60 68
-
--
1
- ±100 ±500
- ±4 ±10
V
μA
nA
uA
1 1.7
- 1.3
-1
0.1 -
2.5
3
2
-
V
S
- 21
- 11
- 4.2
50
25
5
PF
PF
PF
- 10
- 50
- 17
- 10
- 1.7
-
-
-
-
3
nS
nS
nS
nS
nC
- - 1.3
- - 0.2
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
MORE Semiconductor Company Limited
http://www.moresemi.com
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डाउनलोड[ MSN7002E Datasheet.PDF ]


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