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IRF620 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF620
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Inchange Semiconductor |
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IRF620 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRF620 IRF620FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF620 IRF620FI
s s s s
V DSS 200 V 200 V
R DS( on) < 0.8 Ω < 0.8 Ω
ID 6A 4A
TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOG |
STMicroelectronics |
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IRF620 | N-Channel Power MOSFET IRF620
Data Sheet June 1999 File Number
1577.3
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te |
Intersil Corporation |
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IRF620 | N-Channel Power MOSFET Data Sheet
January 2002
IRF620
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guara |
Fairchild Semiconductor |
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IRF620 | Power MOSFET www.DataSheet4U.com
IRF620
Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A
D
G S
N Channel
Symbol
ELECTRICAL CHARACTERISICS at
Tj = 25 C Maximum. Unless stated Otherwise Symbol
Parameter
Drain t |
TRANSYS Electronics |
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IRF620 | Power MOSFET www.vishay.com
IRF620
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
14 3.0 7.9 Singl |
Vishay |
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IRF6201PBF | Power MOSFET PD - 97500A
IRF6201PbF
VDS RDS(on) max
(@VGS = 4.5V)
20 2.45 2.75 130 27
V mΩ mΩ nC A
6 6 6 *
HEXFET® Power MOSFET
' ' ' '
RDS(on) max
(@VGS = 2.5V)
Qg (typical) ID
(@TA = 25°C)
SO- |
International Rectifier |
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