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IRF6201PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6201PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF6201PBF?> डेटा पत्रक पीडीएफ

IRF6201PBF pdf
IRF6201PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
–––
–––
VGS(th)
Gate Threshold Voltage
0.5
IDSS Drain-to-Source Leakage Current
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current
(Body Diode)
–––
ÙISM Pulsed Source Current
(Body Diode)
–––
VSD Diode Forward Voltage
–––
trr Reverse Recovery Time
–––
Qrr Reverse Recovery Charge
Thermal Resistance
–––
Parameter
fRθJL Junction-to-Drain Lead
eRθJA Junction-to-Ambient
Typ.
–––
4.6
1.90
2.10
–––
–––
–––
–––
–––
130
16
60
29
100
320
265
8555
1735
1290
Typ.
–––
–––
–––
82
180
Max.
–––
–––
2.45
2.75
1.1
1.0
150
100
-100
195
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
ddm
VGS = 4.5V, ID = 27A
VGS = 2.5V, ID = 22A
V VDS = VGS, ID = 100µA
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA
VGS = 12V
VGS = -12V
VGS = 4.5V
nC VDS = 10V
ID = 22A
VDD = 20V, VGS = 4.5V
ns
ID = 1.0A
RG = 6.8
See Figs. 10a & 10b
VGS = 0V
pF VDS = 16V
ƒ = 1.0MHz
Max.
2.5
110
1.2
120
270
Units
Conditions
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
dV TJ = 25°C, IS = 2.5A, VGS = 0V
dns TJ = 25°C, IF = 2.5A, VDD = 16V
nC di/dt = 100/µs
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board.
„ Rθ is measured at TJ approximately 90°C.
2
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International Rectifier


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