IRF540NPbF डाटा शीट PDF( Datasheet )

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from Internationa

isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF540NPBF ·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching Speed ·Minimum Lot-t