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IRF540NPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF540NPbF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF540NPbF?> डेटा पत्रक पीडीएफ

IRF540NPbF pdf
IRF540NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
EAS Single Pulse Avalanche Energy
Min. Typ. Max.
100 ––– –––
––– 0.12 –––
––– ––– 44
2.0 ––– 4.0
21 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 71
––– ––– 14
––– ––– 21
––– 11 –––
––– 35 –––
––– 39 –––
––– 35 –––
––– 4.5 –––
––– 7.5 –––
––– 1960 –––
––– 250 –––
––– 40 –––
––– 700 185
Units
V
V/°C
m
V
S
µA
nA
nC
ns
nH
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 16A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 16A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 16A
VDS = 80V
VGS = 10V, See Fig. 6 and 13
VDD = 50V
ID = 16A
RG = 5.1
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 16A, L = 1.5mH
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L =1.5mH
RG = 25, IAS = 16A. (See Figure 12)
Min. Typ. Max. Units
Conditions
––– ––– 33
––– ––– 110
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V
––– 115 170 ns TJ = 25°C, IF = 16A
––– 505 760 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ISD ≤ 16A, di/dt 340A/µs, VDD V(BR)DSS,
TJ 175°C
Pulse width 400µs; duty cycle 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
2 www.irf.com

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