डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMA8878 | Single N-Channel PowerTrench MOSFET FDMA8878 Single N-Channel Power Trench® MOSFET
May 2012
FDMA8878
Single N-Channel Power Trench® MOSFET
30 V, 9.0 A, 16 mΩ
Features
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A Max rDS(on) = 19 mΩ |
Fairchild Semiconductor |
|
FDMA8878 | N-Channel MOSFET +
MOSFET – N-Channel, POWERTRENCH)
30 V, 9.0 A, 16 mW
FDMA8878, FDMA8878-F130
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized fo |
ON Semiconductor |
|
FDMA8878-F130 | N-Channel MOSFET +
MOSFET – N-Channel, POWERTRENCH)
30 V, 9.0 A, 16 mW
FDMA8878, FDMA8878-F130
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized fo |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |