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FDMA8878 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMA8878
समारोह Single N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMA8878?> डेटा पत्रक पीडीएफ

FDMA8878 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
Min Typ Max Units
30 V
26 mV/°C
1 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
1.2 1.8 3.0 V
ID = 250 μA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 9.0 A
VGS = 4.5 V, ID = 8.5 A
VGS = 10 V, ID = 9.0 A, TJ = 125 °C
VDD = 5 V, ID = 9.0 A
13 16
16 19 mΩ
17 21
41 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
539 720 pF
172 230 pF
24 35 pF
1.3 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 9.0 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 9.0 A
6 12 ns
2 10 ns
14 25 ns
2 10 ns
8.5 12 nC
4.1 5.8 nC
1.6 nC
1.2 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.0 A
VGS = 0 V, IS = 9.0 A
(Note 2)
(Note 2)
0.75 1.2
0.86 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 9.0 A, di/dt = 100 A/μs
16 28 ns
4 10 nC
NOTES:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev. C
2
www.fairchildsemi.com

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डाउनलोड[ FDMA8878 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
FDMA8878Single N-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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