FDD86369 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FDD86369 FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.9mΩ(Max) @ VGS= 10V ·100% aval

FDD86369 N-Channel PowerTrench® MOSFET www.onsemi.com FDD86369 N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ Features „ Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 34 nC at

FDD86369-F085 N-Channel PowerTrench® MOSFET FDD86369-F085 N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ Features „ Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 34 nC at VGS =

FDD86369_F085 N-Channel PowerTrench® MOSFET FDD86369_F085 N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ May 2015 Features „ Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 34 nC