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FDD86369_F085 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - Fairchild Semiconductor

भाग संख्या FDD86369_F085
समारोह MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
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<?=FDD86369_F085?> डेटा पत्रक पीडीएफ

FDD86369_F085 pdf
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=80V, TJ = 25oC
VGS = 0V TJ = 175oC (Note 4)
VGS = ±20V
80
-
-
-
- -V
- 1 μA
- 1 mA
- ±100 nA
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A, TJ = 25oC
VGS= 10V TJ = 175oC (Note 4)
2.0
-
-
2.7 4.0
5.9 7.9
13.0 17.4
V
mΩ
mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
Switching Characteristics
VDS = 40V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 64V
ID = 80A
- 2530
-
- 430
-
- 16
-
- 2.2
-
- 36 54
- 4.6 -
- 13 -
- 8.5 -
pF
pF
pF
Ω
nC
nC
nC
nC
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 40V, ID = 80A,
VGS = 10V, RGEN = 6Ω
- - 70 ns
- 13 - ns
- 34 - ns
- 22 - ns
- 9 - ns
- - 46 ns
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
ISD =80A, VGS = 0V
ISD = 40A, VGS = 0V
IF = 80A, dISD/dt = 100A/μs
--
--
- 49
- 40
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
1.25
1.2
64
53
V
V
ns
nC
©2015 Fairchild Semiconductor Corporation
FDD86369_F085 Rev. 1.0
2
www.fairchildsemi.com

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भाग संख्याविवरणविनिर्माण
FDD86369_F085MOSFETFairchild Semiconductor
Fairchild Semiconductor


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