FDA59N30 डाटा शीट PDF( Datasheet )

FDA59N30 — N-Channel UniFETTM MOSFET FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 77 nC) • Low Crss (Typ.

Isc N-Channel MOSFET Transistor FDA59N30 ·FEATURES ·With To-3P package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust