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FDA59N30 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 300V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDA59N30
समारोह 300V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDA59N30?> डेटा पत्रक पीडीएफ

FDA59N30 pdf
Package Marking and Ordering Information
Device Marking
FDA59N30
Device
FDA59N30
Package
TO-3P
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 300V, VGS = 0V
VDS = 240V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
300
--
--
--
--
--
VDS = VGS, ID = 250µA
VGS = 10V, ID = 29.5A
VDS = 40V, ID = 29.5A
3.0
--
(Note 4)
--
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
VDD = 150V, ID = 59A
RG = 25
VDS = 240V, ID = 59A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 59A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ.
--
0.3
--
--
--
--
--
0.047
52
3590
710
80
140
575
120
200
77
22
40
--
--
--
246
6.9
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0
0.056
--
V
S
4670
920
120
pF
pF
pF
290
1160
250
410
100
--
--
ns
ns
ns
ns
nC
nC
nC
59 A
236 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.83mH, IAS = 59A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 59A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA59N30 Rev. A
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet.in/

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