डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
CEB13N10 | N-Channel MOSFET CEP13N10/CEB13N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing ca |
CET |
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CEB13N10L | N-Channel MOSFET CEP13N10L/CEB13N10L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). |
CET |
www.DataSheet.in | 2017 | संपर्क |