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CEB13N10L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEB13N10L
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEB13N10L?> डेटा पत्रक पीडीएफ

CEB13N10L pdf
CEP13N10L/CEB13N10L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 5 V, ID = 5A
VDS = 10V, ID = 6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 80, ID = 11A,
VGS = 10V, RGEN = 9.1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 11A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 12.8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
100
1
Typ Max Units
1
100
-100
V
µA
nA
nA
3V
140 175 m
150 185 m
5S
450 pF
90 pF
25 pF
8 16 ns
4 8 ns
30 60 ns
3 6 ns
12 24 nC
1.3 nC
3 nC
12.8 A
1.5 V
2

विन्यास 4 पेज
डाउनलोड[ CEB13N10L Datasheet.PDF ]


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