2SJ221 डाटा शीट PDF( Datasheet )

2SJ221 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V sourc

2SJ221 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source

isc P-Channel MOSFET Transistor 2SJ221 DESCRIPTION ·Low On Resistance ·High Speed Switching ·Low Drive Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT