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2SJ221 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon P Channel MOS FET - Renesas

भाग संख्या 2SJ221
समारोह Silicon P Channel MOS FET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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<?=2SJ221?> डेटा पत्रक पीडीएफ

2SJ221 pdf
2SJ221
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
Tch
Tstg
Value
–100
±20
–20
–80
–20
75
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Note: 3. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
Min
–100
±20
–1.0
7.5
Typ
0.12
0.16
12
1800
680
145
15
115
320
170
–1.05
280
Max
±10
–250
–2.0
0.16
0.22
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –80 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V Note 3
ID = –10 A, VGS = –4 V Note 3
ID = –10 A, VDS = –10 V Note 3
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –10 A
VGS = –10 V
RL = 3
IF = –20 A, VGS = 0
IF = –20 A, VGS = 0
diF/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6

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