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LN4812LT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement-Mode MOSFET - LRC

भाग संख्या LN4812LT1G
समारोह N-Channel Enhancement-Mode MOSFET
मैन्युफैक्चरर्स LRC 
लोगो LRC लोगो 
पूर्व दर्शन
1 Page
		
<?=LN4812LT1G?> डेटा पत्रक पीडीएफ

LN4812LT1G pdf
LESHAN RADIO COMPANY, LTD.
LN4812LT1G , S-LN4812LT1G
ELECTRICAL CHARACTERISTICS
Symbol Parameter
Static
BVDSS Drain-Source Breakdown Voltage
RDS(on) Drain-Source On-State Resistance
RDS(on) Drain-Source On-State Resistance
VGS(th) Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate Body Leakage
gfs Forward Transconductance
Dynamic3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Source-Drain Diode
IS Max. Diode Forward Current
VSD Diode Forward Voltage
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Test Condition
VGS = 0V, ID = 250uA
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 6A
VDS =VGS, ID = 250uA
VDS = 24V, VGS = 0V
VGS = ± 20V, VDS = 0V
VDS = 5V, ID = 6.9A
VDS = 15V, ID = 8.5A
VGS = 10V
VDD = 15V, RL = 15
ID = 1A, VGEN = 10V
RG = 6
VDS = 15V, VGS = 0V
f = 1.0 MHz
IS = 1A, VGS = 0V
Min Typ Max Unit
30 V
35.0 52.0
mΩ
22.0 38.0
1 1.5 3
V
1 uA
+ 100
nA
15.4 S
13 20
4.2
3.1
9
14
30
5
610
100
77
nC
ns
pF
3A
1.3 V
Rev .O 2/4

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डाउनलोड[ LN4812LT1G Datasheet.PDF ]


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