डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
LN4812LT1G | N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), [email protected], Ids@5A = 52mΩ
Features
Advanced trench process technology High Density Cell D |
LRC |
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LN4812LT1G | N-Channel Enhancement-Mode MOSFET | LRC |
www.DataSheet.in | 2017 | संपर्क |