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FDP3651U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDP3651U
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP3651U?> डेटा पत्रक पीडीएफ

FDP3651U pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 80V
VGS = 0V
TC=150°C
VGS = ±20V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
rDS(on)
Drain to Source On Resistance
VGS = VDS, ID = -250µA
VGS = 10V , ID = 80A
VGS = 10V , ID = 40A
VGS=10V, ID=40A,TJ=175oC
Dynamic Characteristics
Ciss
Coss
Crss
Qg(TOT)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
VDS = 25V,VGS = 0V
f=1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V
ID = 80A
Resistive Switching Characteristics
t(on)
td(on)
tr
td(off)
tf
t(off)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 50V, ID = 80A
VGS = 10V, RGS = 5.0
Drain-Source Diode Characteristics
VSD
Source to Drain Diode
Forward Voltage
ISD = 80A
ISD = 40A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Is = 40 A, di/dt = 100A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=0.13mH, IAS = 64A, VDD=50V, RG=25 , Starting TJ=25oC
Min
100
-
-
-
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
-1
- 250
- ±100
4.5 5.5
15 18
13 15
32 37
4152
485
89
49
7
23
16
5522
728
118
69
9.8
-
-
- 64
15 27
16 29
32 52
14 26
- 78
0.99 1.25
0.88 1.0
70 105
202 303
Unit
V
µA
µA
nA
V
m
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
V
V
ns
nC
©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
2
www.fairchildsemi.com

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