FDP3651U डाटा शीट PDF( Datasheet )

FDP3651U — N-Channel PowerTrench® MOSFET October 2013 FDP3651U N-Channel PowerTrench® MOSFET 100 V, 80 A, 18 mΩ Features • RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • High Performance Trench

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-