डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
WTC2305 | Enhancement Mode Power MOSFET WTC2305
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V |
Weitron Technology |
|
WTC2305 | P-Channel Enhancement Mode Power MOSFET WTC2305
P-Channel Enhancement Mode Power MOSFET
1 GATE 3 DRAIN
DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
Features:
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V |
Weitron Technology |
|
WTC2305A | Enhancement Mode Power MOSFET WTC2305A
P-Channel Enhancement Mode Power MOSFET
1 GATE
SOURCE
3 DRAIN
DRAIN CURRENT -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
2
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Features:
*Super High Dense Cell Design For Low R DS |
Weitron Technology |
www.DataSheet.in | 2017 | संपर्क |