डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
WPMD2008 | MOSFET WPMD2008
Dual P-Channel, -20 V, - 4 .1A, Power MOSFET
Description
The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC |
WillSEMI |
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WPMD2008 | MOSFET | WillSEMI |
www.DataSheet.in | 2017 | संपर्क |