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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
WFF2N65 | Silicon N-Channel MOSFET Features
� 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Tem |
Winsemi |
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WFF2N65B | Silicon N-Channel MOSFET Features
� 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Tem |
Winsemi |
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WFF2N65L | Silicon N-Channel MOSFET WFF2N65L Product Description
Silicon N-Channel MOSFET
Features
� 2A,650V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 8nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum |
Winsemi |
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