डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
WFF20N60 | Power MOSFET Features
� 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V � Ultra-low Gate charge(Typical 50nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFF20N60
Silicon |
Winsemi |
|
WFF20N60S | Power MOSFET WFF20N60S
Silicon N-Channel MOSFET
Features
� Ultra low Rdson � Ultra-low Gate charge(Typical 65nC) � 100% UIS Tested � RoHS compliant
General Description
Winsemi Power MOSFET is fabricated using advan |
Winsemi |
www.DataSheet.in | 2017 | संपर्क |