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VS3009DS DataSheet

No. Partie # Fabricant Description Fiche Technique
1
VS3009DS

Vanguard Semiconductor
30V/8A Dual N-Channel Advanced Power MOSFET
30V/8A Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET SOP8 Description VS3009DS designed by the
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