| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Microsemi |
RF POWER VERTICAL MOSFET • Improved Ruggedness V(BR)DSS = 170V • 300W with 22dB Typ. Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • 3:1 Load VSWR Capability at Specified Operating Conditions • Nitride Pas |
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Microchip |
RF Power MOSFET • Improved ruggedness V(BR)DSS = 170 V • 300 W with 22 dB typical gain at 30 MHz, 50 V • Excellent stability and low IMD • Common source configuration • Available in matched pairs (VRF2933MP) • 70:1 load VSWR capability at specified operating condition |
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Microchip |
RF Power MOSFET • Improved ruggedness V(BR)DSS = 170 V • 300 W with 22 dB typical gain at 30 MHz, 50 V • Excellent stability and low IMD • Common source configuration • Available in matched pairs (VRF2933MP) • 70:1 load VSWR capability at specified operating condition |
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Microsemi |
RF POWER VERTICAL MOSFET • Improved Ruggedness V(BR)DSS = 170V • 300W with 22dB Typ. Gain @ 30MHz, 50V • Excellent Stability & Low IMD • Common Source Configuration • Available in Matched Pairs • 3:1 Load VSWR Capability at Specified Operating Conditions • Nitride Pas |
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