डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
UML1 | NPN SILICON RF POWER TRANSISTOR UML1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UML1 is Designed for
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
• • • Omnigold™ Metalization System
B
D
C J
E
I
MAXIMUM RATINGS
IC VCBO |
Advanced Semiconductor |
|
UML10 | NPN SILICON RF POWER TRANSISTOR UML10
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The UML10 is Designed for
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
• • • Omnigold™ Metalization System
B
D
C J
E
I
MAXIMUM RATINGS
IC VCBO V |
Advanced Semiconductor |
|
UML100 | NPN SILICON RF POWER TRANSISTOR UML100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The UML100 is Designed for High Power Class C Amplifiers in 225 to 400 MHz Military Communication Equipment.
PACKAGE STYLE .500 6L FLG
C A 2x ØN FULL R D
|
Advanced Semiconductor |
|
UML11N | General purpose transistor www.DataSheet4U.com
EML11 / UML11N
Transistors
General purpose transistor (isolated transistor and diode)
EML11 / UML11N
2SA1774 and a RB521S-30 are housed independently in a EMT5 or UMT5 package.
zApplicati |
Rohm |
|
UML12N | General purpose transistor www.DataSheet4U.com
EML12 / UML12N
Transistors
General purpose transistor (isolated transistor and diode)
EML12 / UML12N
2SC4617and RB521S-30 are housed independently in a EMT5 or UMT5 package.
zApplications |
Rohm |
|
UML15 | NPN SILICON RF POWER TRANSISTOR UML15
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UML15 is Designed for
45°
PACKAGE STYLE .280 4L STUD
A
FEATURES:
• • • Omnigold™ Metalization System
B C J E I
D
MAXIMUM RATINGS
IC VCBO |
Advanced Semiconductor |
|
UML1N | PNP Transistor NotNeRewcDoemsimgennsded for
UML1N
PNP complex transistor with switching diode
Parameter
VCEO IC
Value
-50V -150mA
lFeatures
1)The 2SA1774 and a diode are housed independently in a SOT-353 package.
lOutlin |
Rohm |
www.DataSheet.in | 2017 | संपर्क |