TTD1415B डाटा शीट PDF( Datasheet )

Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications • High-Power Switching • Hammer Drivers 2. Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)

isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Complement to Ty