TTA1452 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor TTA1452 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Minimum Lot-to-Lot variations for robus

Bipolar Transistors Silicon PNP Epitaxial Type TTA1452B TTA1452B 1. Applications • High-Current Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = -0.4 V (max) (IC = -6 A , IB =

isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Low collector-emitter saturation voltage: VCE(sat)≤ -0.4V@IC= -6A; IB= -300mA ·Minimum Lot-to-Lot v