डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TSG65N195CE | Power Transistor FEATURES
● 650 V enhancement mode power transistor ● 850 V transient drain-to-source voltage ● Bottom-cooled 8x8 mm PDFN package ● RDS(on)(Typ) = 150 mΩ ● DS(max) = 11 A / IDS(Max pulse) = 19A ● U |
Taiwan Semiconductor |
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TSG65N195CE | Power Transistor | Taiwan Semiconductor |
www.DataSheet.in | 2017 | संपर्क |