डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TRS10A65F | SiC Schottky Barrier Diode SiC Schottky Barrier Diode
FEATURES ·Forward DC current
IF(DC) = 10 A ·Repetitive peak reverse voltage
VRRM = 650 V ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLI |
INCHANGE |
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TRS10A65F | SiC Schottky Barrier Diode SiC Schottky Barrier Diode
TRS10A65F
1. Applications
• Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters
2. Features
(1) Chip design of 2nd generation. (2) Hi |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |