TK9P65W डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.56Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.35mA) ·100% avalanche tested ·Minimum Lot-to-Lot variat

MOSFETs Silicon N-Channel MOS (DTMOS) TK9P65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω(typ.) by using Super Junction Structure : DTM