TK7A80W डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor TK7A80W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.95Ω. ·Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.28mA) ·100% avalanche tested ·Minimum Lot-to-L

MOSFETs Silicon N-Channel MOS (DTMOS) TK7A80W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.795 Ω (typ.) by using Super Junction Structure : D