TK6P53D डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.3Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot vari

TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6P53D Switching Regulator Applications Unit: mm 1.08±0.2 • Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) • Hi