TK6A80E डाटा शीट PDF( Datasheet )

MOSFETs Silicon N-Channel MOS (π-MOS) TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK6A80E，ITK6A80E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.7Ω. ·Enhancement mode: Vth = 2.5 to 4.0V (VDS = 10 V, ID=0.6mA) ·100% av