TK6A65W डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK6A65W，ITK6A65W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.85Ω (typ.) ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.18mA) ·1

MOSFETs Silicon N-Channel MOS (DTMOS) TK6A65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.85 Ω(typ.) by using Super Junction Structure : DTM