TK6A60D डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor TK6A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.25Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lo

TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer ad