TK58E06N1 डाटा शीट PDF( Datasheet )

TK58E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK58E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) L

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK58E06N1，ITK58E06N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤5.4mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID