TK560P60Y डाटा शीट PDF( Datasheet )

MOSFETs Silicon N-Channel MOS (DTMOS) TK560P60Y TK560P60Y 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.43 Ω (typ.) by using Super Junction

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.56Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu