TK50J30D डाटा शीट PDF( Datasheet )

MOSFETs Silicon N-Channel MOS (π-MOS) TK50J30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.) (2) Low leakage current: IDSS = 10

iscN-Channel MOSFET Transistor TK50J30D ·FEATURES ·Low drain-source on-resistance: RDS(ON) =52mΩ (MAX.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·